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| SMT720 Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT720 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10 mW typical of output power. It emits a spectral band of radiation at 720 nm. Outer dimension (Unit: mm) TOP IR LED SMT720 AlGaAs 720 nm typ. Silver Plated PPA Resin Epoxy Resin Absolute Maximum Rating Item Power Dissipation Forward Current Pulse Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol PD IF IFP VR TOPR Maximum Rated Value 100 50 200 5 -20 ~ +80 -30 ~ +80 240 Unit mW mA mA V C C C Ambient Temperature Ta = 25C Ta = 25C Ta = 25C Ta = 25C TSTG TSOL Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 s. Soldering condition: Soldering condition must be completed within 3 seconds at 260C Electro-Optical Characteristics [Ta=25C] Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 5.0 Radiant Intensity IE IF=50mA 2.0 Peak Wavelength lP IF=50mA Half Width Dl IF=50mA Viewing Half Angle Q1/2 IF=50mA Rise Time tr IF=50mA Fall Time tf IF=50mA Total Radiated Power is measured by Photodyne #500 Radiant Intensity is measured by Tektronix J-6512. Typical 1.90 10.0 5.0 720 20 55 80 80 Maximum 2.30 10 Unit V uA mW mW/sr nm nm deg. ns ns |
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